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| EIA1414-6 UPDATED 12/5/2005 14.00-14.50 GHz 6-Watt Internally Matched Power FET FEATURES * * * * * * 14.00- 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package .060 MIN. Excelics EIA1414-6 YM SN .094 .382 .060 MIN. .650.008 .512 GATE DRAIN .319 .022 .045 .004 .070 .008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.00-14.50GHz VDS = 8 V, IDSQ 1600mA Gain at 1dB Compression f = 14.00-14.50GHz VDS = 8 V, IDSQ 1600mA Gain Flatness f = 14.00-14.50GHz VDS = 8 V, IDSQ 1600mA Power Added Efficiency at 1dB Compression f = 14.00-14.50GHz VDS = 8 V, IDSQ 1600mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 36.5 7.0 TYP 37.5 8.0 MAX UNITS dBm dB 0.6 33 1800 2800 -1.0 4.5 2100 3500 -2.5 5.0 o dB % mA mA V C/W f = 14.00-14.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 28mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS 1,2 PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12 -5 IDSS 43.2mA -7.2mA 36.5dBm 175 oC -65 to +175 oC 30W CONTINUOUS2 8V -3V 3.5A 14.4mA -2.4mA @ 3dB Compression 175 oC -65 to +175 oC 30W Vds Vgs Ids Igsf Igsr Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2005 |
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